Dielectric properties and microstructure of CaCu3Ti 4-xMnxO12 ceramics

Abstract

In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still remains high. The sample CaCu 3Ti3.76Mn0.24O12 exhibits a high εr over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the εr value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense ( ≥ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-x MnxO12 system is believed to be a promising candidate for capacitor applications.