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dc.contributor.authorW. Makcharoenen_US
dc.contributor.authorJ. Tontrakoonen_US
dc.contributor.authorP. Thavornyutikarnen_US
dc.contributor.authorD. P. Cannen_US
dc.contributor.authorT. Tunkasirien_US
dc.description.abstractIn this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solidstate reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (εr) still remains high. The sample CaCu 3Ti3.76Mn0.24O12 exhibits a high εr over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the εr value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense ( ≥ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-x MnxO12 system is believed to be a promising candidate for capacitor applications.en_US
dc.subjectMaterials Scienceen_US
dc.titleDielectric properties and microstructure of CaCu3Ti 4-xMnxO12 ceramicsen_US
dc.typeConference Proceedingen_US
article.title.sourcetitleIEEE International Symposium on Applications of Ferroelectricsen_US
article.volume1en_US Mai Universityen_US State Universityen_US
Appears in Collections:CMUL: Journal Articles

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