Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/58682
Title: Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe<inf>3</inf>
Authors: Tawat Suriwong
Ken Kurosaki
Somchai Thongtem
Keywords: Engineering
Materials Science
Issue Date: 25-Feb-2018
Abstract: © 2017 Elsevier B.V. Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe3were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant, i.e., the starting compositions were set as InSi1-xPxTe3(x = 0, 0.02, 0.04, 0.06, and 0.1), The P doping increases the carrier concentration, which leads to decrease in both the electrical resistivity (ρ) and the Seebeck coefficient (S), while has little effect on the thermal conductivity (κ). As the results, the figure of merit ZT = S2ρ−1κ−1T increases with increasing the P content. The maximum ZT value is 0.14 at 723 K, obtained for InSi0.9P0.1Te3. The present results suggest that InSiTe3can be a good TE material.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85033573264&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/58682
ISSN: 09258388
Appears in Collections:CMUL: Journal Articles

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