Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/53649
Title: Effects of Dy substitution for Bi on phase, microstructure and dielectric properties of layer-structured Bi<inf>4-x</inf>Dy<inf>x</inf>Ti<inf>3</inf>O<inf>12</inf>ceramics
Authors: Navavan Thongmee
Anucha Watcharapasorn
Sukanda Jiansirisomboon
Authors: Navavan Thongmee
Anucha Watcharapasorn
Sukanda Jiansirisomboon
Keywords: Materials Science;Physics and Astronomy
Issue Date: 2-Jan-2014
Abstract: Bi4-xDyxTi3O12(when x = 0, 0.25, 0.5, 0.75 and 1.0) powders and ceramics were prepared by solid-state mixed oxide method. The calcination was carried out at 900°C for 4 h with heating/cooling rate 5°C/min. The ceramics were then sintered at a temperature between 950-1100°C for 4 hrs. The optimum sintering temperature was found to be 1000°C. X-ray diffraction indicated the existence of orthorhombic phase for all sintering temperatures. Scanning electron micrographs of ceramic surfaces showed a plate-like structure with different grain size. The results of room temperature dielectric constant revealed that Dy dopant could dielectric constant of Bi4Ti3O12ceramic where it was optimized at x = 0.25. © 2014 Copyright Taylor and Francis Group, LLC.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84892854371&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/53649
ISSN: 15635112
00150193
Appears in Collections:CMUL: Journal Articles

Files in This Item:
There are no files associated with this item.


Items in CMUIR are protected by copyright, with all rights reserved, unless otherwise indicated.