Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/49980
Title: Synthesis and high-temperature thermoelectric properties of Ni<inf>3</inf>GaSb and Ni<inf>3</inf>InSb
Authors: Tawat Suriwong
Ken Kurosaki
Somchai Thongtem
Adul Harnwunggmoung
Tohru Sugahara
Theerayuth Plirdpring
Yuji Ohishi
Hiroaki Muta
Shinsuke Yamanaka
Keywords: Engineering
Materials Science
Issue Date: 3-Mar-2011
Abstract: Ni3GaSb and Ni3InSb were successfully synthesized by the direct reaction of Ni and GaSb or InSb. The XRD patterns and the lattice parameters of these compounds were in good agreement with the literature data. The Seebeck coefficient (S), the electrical resistivity (ρ), and the thermal conductivity (κ) of Ni3GaSb and Ni3InSb were examined in the temperature range from room temperature to 1073 K. Both compounds indicated metal-like characteristics. The power factor (S2ρ-1) values increased with temperature and reached maximum at 1073 K. The κ and the dimensionless figure of merit ZT of both samples increased with temperature. The maximum values of the ZT of Ni3GaSb and Ni3InSb were obtained at 1073 K to be 0.022 and 0.023, respectively. © 2011 Elsevier B.V. All rights reserved.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79551687717&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/49980
ISSN: 09258388
Appears in Collections:CMUL: Journal Articles

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