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Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/72073
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dc.contributor.authorMakoto Shiojirien_US
dc.date.accessioned2021-04-23T08:50:39Z-
dc.date.available2021-04-23T08:50:39Z-
dc.date.issued2008en_US
dc.identifier.citationChiang Mai Journal of Science 35, 3 (September 2008),495-520en_US
dc.identifier.issn2465-3845en_US
dc.identifier.urihttps://epg.science.cmu.ac.th/ejournal/dl.php?journal_id=276en_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/72073-
dc.descriptionThe Chiang Mai Journal of Science is an international English language peer-reviewed journal which is published in open access electronic format 6 times a year in January, March, May, July, September and November by the Faculty of Science, Chiang Mai University. Manuscripts in most areas of science are welcomed except in areas such as agriculture, engineering and medical science which are outside the scope of the Journal. Currently, we focus on manuscripts in biology, chemistry, physics, materials science and environmental science. Papers in mathematics statistics and computer science are also included but should be of an applied nature rather than purely theoretical. Manuscripts describing experiments on humans or animals are required to provide proof that all experiments have been carried out according to the ethical regulations of the respective institutional and/or governmental authorities and this should be clearly stated in the manuscript itself. The Editor reserves the right to reject manuscripts that fail to do so.en_US
dc.description.abstractAtomic-resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) has been used to the structural and compositional analysis of materials. The first part of this paper is a review of our recent HAADF-STEM investigations, which comprise physics to understand its imaging, and illustration of artifacts in images and imaging process. Next, we present our investigations of the multiple InGaN/GaN quantum wells and the strained AlGaN/GaN superlattice cladding in InGaN-based light emitting diodes or laser diodes, which have been performed by HAADF-STEM, high-resolution field-emission scanning electron microscopy, and high-resolution transmission electron microscopy. The observation of ultra-high density InGaN quantum dots is also shown.en_US
dc.language.isoEngen_US
dc.publisherFaculty of Science, Chiang Mai Universityen_US
dc.subjecthigh-angle annular dark field scanning transmission electron microscopyen_US
dc.subjectfield-emission scanning electron microscopyen_US
dc.subjecthigh-resolution transmission electron microscopyen_US
dc.subjectInGaN-based light emitting diodesen_US
dc.subjectlaser diodesen_US
dc.subjectmultiple quantum wellsen_US
dc.subjectstrain-layer superlattice claddingen_US
dc.subjectquantum dotsen_US
dc.titleImaging of High-Angle Annular Dark Field Scanning Transmission Electron Microscopy and Microscopy Studies of GaN-based Light Emitting Diodes and Laser Diodesen_US
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