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dc.contributor.authorW. Thongpanen_US
dc.contributor.authorD. Louloudakisen_US
dc.contributor.authorP. Pooseekheawen_US
dc.contributor.authorT. Kumpikaen_US
dc.contributor.authorE. Kantaraken_US
dc.contributor.authorA. Panthawanen_US
dc.contributor.authorA. Tuantranonten_US
dc.contributor.authorW. Thongsuwanen_US
dc.contributor.authorP. Singjaien_US
dc.date.accessioned2019-08-05T04:38:31Z-
dc.date.available2019-08-05T04:38:31Z-
dc.date.issued2019-07-31en_US
dc.identifier.issn00406090en_US
dc.identifier.other2-s2.0-85065018115en_US
dc.identifier.other10.1016/j.tsf.2019.04.010en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85065018115&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/65662-
dc.description.abstract© 2019 Elsevier B.V. In this paper, high porous tungsten oxide (WO 3 )films were prepared onto indium-doped tin oxide glass substrates by a sparking method, which is a simple and cost-effective technique. An external electric field of 6 kV/cm was applied to the sparking system in order to increase a dense surface morphology and the deposition rate of the films. In experiments, the films were deposited for 20 min at room temperature and post-annealed from 200 to 500 °C for 1 h under atmospheric pressure. High porosity of the WO 3 films was fabricated by the sparking method and confirmed by scanning with electron microscopy. Raman spectra and X-ray diffraction patterns show the monoclinic phase of WO 3 when the annealing temperature is higher than 300 °C. In addition, the electrochemical analysis was carried out by using a 0.05 M H 2 SO 4 electrolyte solution, Pt as a counter electrode, and Ag/AgCl as a reference electrode. The fast switching speeds of 1.2 s and 2.6 s (for the coloration and bleaching state respectively), optical modulation of 16.3%, and coloration efficiency of 49.6 cm 2 /C were achieved for annealed films at 300 °C.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectrochromic properties of tungsten oxide films prepared by sparking method using external electric fielden_US
dc.typeJournalen_US
article.title.sourcetitleThin Solid Filmsen_US
article.volume682en_US
article.stream.affiliationsFoundation for Research and Technology-Hellas, Institute of Electronic Structure and Laseren_US
article.stream.affiliationsThailand National Electronics and Computer Technology Centeren_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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