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dc.contributor.authorWorasak Sukkaboten_US
dc.date.accessioned2019-05-07T09:59:47Z-
dc.date.available2019-05-07T09:59:47Z-
dc.date.issued2018en_US
dc.identifier.issn0125-2526en_US
dc.identifier.urihttp://it.science.cmu.ac.th/ejournal/dl.php?journal_id=8991en_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/64102-
dc.description.abstractThe atomistic tight-binding simulation on InN/GaN core/shell nanocrystals is mainly reported with the objective to understand the influence of the core sizes on the structural and optical properties. Computed by tight-binding theory, the single-particle spectra, excitonic states, atomistic characters, carrier overlaps, radiative lifetimes, and oscillation strengths are numerically analyzed as a function of core diameters. The detailed calculations are significantly sensitive with the core diameters. With the increasing InN core diameters, the atomistic transformations of the atomistic characters in the first-two hole states are interestingly presented, thus leading to a significant change in the structural and optical properties of InN/GaN core/shell nanocrystals. The proficient manipulation of these numerical results is considerably concluded by changing the core dimensions. The principle of core impact on the structural and optical properties of InN/GaN core/shell nanocrystals will be a valuable guideline to fabricate several electronic nanodevices.en_US
dc.languageEngen_US
dc.publisherScience Faculty of Chiang Mai Universityen_US
dc.titleTight-binding simulation of core impact on structural and optical properties of InN/GaN core/shell nanocrystalsen_US
dc.typeบทความวารสารen_US
article.title.sourcetitleChiang Mai Journal of Scienceen_US
article.volume45en_US
article.stream.affiliationsDepartment of Physics, Faculty of Science, Ubon Ratchathani University, 85 Sathollmark Rd. Warinchamrab, Ubon Ratchathani, 34190, Thailand.en_US
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