Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/59940
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dc.contributor.authorK. Sutjarittangthamen_US
dc.contributor.authorN. Tawichaien_US
dc.contributor.authorU. Intathaen_US
dc.contributor.authorS. Eitssayeamen_US
dc.contributor.authorK. Pengpaten_US
dc.contributor.authorG. Rujijanagulen_US
dc.contributor.authorT. Tunkasirien_US
dc.date.accessioned2018-09-10T03:24:31Z-
dc.date.available2018-09-10T03:24:31Z-
dc.date.issued2009-11-25en_US
dc.identifier.issn15517616en_US
dc.identifier.issn0094243Xen_US
dc.identifier.other2-s2.0-70450091387en_US
dc.identifier.other10.1063/1.3203230en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450091387&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/59940-
dc.description.abstractDielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of > 21000 (at 1k Hz) was found at the transition temperature of 104°C. With increasing Sn concentration, the degree of diffuse phase transition was enhanced and a linear reduction in the transition temperature was produced. © 2009 American Institute of Physics.en_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramicsen_US
dc.typeConference Proceedingen_US
article.title.sourcetitleAIP Conference Proceedingsen_US
article.volume1151en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsMae Fah Luang Universityen_US
Appears in Collections:CMUL: Journal Articles

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