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DC Field | Value | Language |
---|---|---|
dc.contributor.author | K. Sutjarittangtham | en_US |
dc.contributor.author | N. Tawichai | en_US |
dc.contributor.author | U. Intatha | en_US |
dc.contributor.author | S. Eitssayeam | en_US |
dc.contributor.author | K. Pengpat | en_US |
dc.contributor.author | G. Rujijanagul | en_US |
dc.contributor.author | T. Tunkasiri | en_US |
dc.date.accessioned | 2018-09-10T03:24:31Z | - |
dc.date.available | 2018-09-10T03:24:31Z | - |
dc.date.issued | 2009-11-25 | en_US |
dc.identifier.issn | 15517616 | en_US |
dc.identifier.issn | 0094243X | en_US |
dc.identifier.other | 2-s2.0-70450091387 | en_US |
dc.identifier.other | 10.1063/1.3203230 | en_US |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450091387&origin=inward | en_US |
dc.identifier.uri | http://cmuir.cmu.ac.th/jspui/handle/6653943832/59940 | - |
dc.description.abstract | Dielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of > 21000 (at 1k Hz) was found at the transition temperature of 104°C. With increasing Sn concentration, the degree of diffuse phase transition was enhanced and a linear reduction in the transition temperature was produced. © 2009 American Institute of Physics. | en_US |
dc.subject | Physics and Astronomy | en_US |
dc.title | Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics | en_US |
dc.type | Conference Proceeding | en_US |
article.title.sourcetitle | AIP Conference Proceedings | en_US |
article.volume | 1151 | en_US |
article.stream.affiliations | Chiang Mai University | en_US |
article.stream.affiliations | Mae Fah Luang University | en_US |
Appears in Collections: | CMUL: Journal Articles |
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