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dc.contributor.authorW. Makcharoenen_US
dc.contributor.authorJ. Tontrakoonen_US
dc.contributor.authorP. Thavornyutikarnen_US
dc.contributor.authorT. Tunkasirien_US
dc.date.accessioned2018-09-10T03:24:28Z-
dc.date.available2018-09-10T03:24:28Z-
dc.date.issued2009-11-25en_US
dc.identifier.issn15517616en_US
dc.identifier.issn0094243Xen_US
dc.identifier.other2-s2.0-70449856733en_US
dc.identifier.other10.1063/1.3203258en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70449856733&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/59939-
dc.description.abstractThis paper reports the dielectric properties of the Mn doped Cacu3Ti4O12(CCTO) ceramics synthesized by the conventional solid-state reaction method. By partial Mn for Ti substitution, the dielectric loss was suppressed significantly while the dielectric constant (εr) still remained high. The compound CaCu3Ti3.76Mn0.24O12 exhibits a high εr(>1200) and a low dielectric loss (<0.06 at room temperature). Furthermore, the εrvalue of this material is reasonably independent of temperature. SEM micrographs show no impurity in the Mn doped CCTO ceramics, which exhibit dense microstructures without abnormal grains. This Cacu3Ti4O12system appears to be a promising candidate for capacitor applications. © 2009 Amrican Institute of Physics.en_US
dc.subjectPhysics and Astronomyen_US
dc.titleDielectric properties of CaCu3Ti4-xMn xO12 ceramicsen_US
dc.typeConference Proceedingen_US
article.title.sourcetitleAIP Conference Proceedingsen_US
article.volume1151en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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