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dc.contributor.authorPanupong Jaibanen_US
dc.contributor.authorNuttapon Pisitpipathsinen_US
dc.contributor.authorSuwapitcha Bunthamen_US
dc.contributor.authorAnucha Watcharapasornen_US
dc.date.accessioned2018-09-05T03:31:48Z-
dc.date.available2018-09-05T03:31:48Z-
dc.date.issued2017-08-01en_US
dc.identifier.issn02728842en_US
dc.identifier.other2-s2.0-85019991867en_US
dc.identifier.other10.1016/j.ceramint.2017.05.319en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85019991867&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/56909-
dc.description.abstract© 2017 Elsevier Ltd and Techna Group S.r.l. (Ba0.7Ca0.3)1-x/2Ti1-xTaxO3ceramics where x = 0, 0.01, 0.02 and 0.03 were prepared employing a solid state sintering technique. The decrease of tetragonality and the presence of ferroelectric polar clusters in non-polar matrix were induced via Ta doping. The grain size decreased with an increase of Ta addition. The decrease of the phase transition temperature was observed in correlation with the decrease of tetragonality. Depending on Ta content, the normal ferroelectric and relaxor-like behaviors of dielectric and ferroelectric properties were resulted from the dominance of ferroelectric polar clusters and a creation of donor-induced vacancies. The result here suggested that BCT properties may be largely tunable by Ta dopants and could be an attractive material for high-dielectric response devices.en_US
dc.subjectChemical Engineeringen_US
dc.subjectMaterials Scienceen_US
dc.titleDielectric and ferroelectric properties of Ta-doped Ba<inf>0.7</inf>Ca<inf>0.3</inf>TiO<inf>3</inf>ceramicsen_US
dc.typeJournalen_US
article.title.sourcetitleCeramics Internationalen_US
article.volume43en_US
article.stream.affiliationsKing Mongkut's University of Technology North Bangkoken_US
article.stream.affiliationsRajamangala University of Technology Isanen_US
article.stream.affiliationsChiang Mai Universityen_US
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