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dc.contributor.authorOrapim Namsaren_US
dc.contributor.authorAnucha Watcharapasornen_US
dc.contributor.authorMark Hoffmanen_US
dc.contributor.authorJulia Glaumen_US
dc.contributor.authorSukanda Jiansirisomboonen_US
dc.date.accessioned2018-09-04T10:17:32Z-
dc.date.available2018-09-04T10:17:32Z-
dc.date.issued2015-10-30en_US
dc.identifier.issn15635112en_US
dc.identifier.issn00150193en_US
dc.identifier.other2-s2.0-84951849868en_US
dc.identifier.other10.1080/00150193.2015.1072037en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84951849868&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/54597-
dc.description.abstractCopyright © 2015 Taylor and Francis Group, LLC. Electrical properties of the (1-x)PZT-xSBT ceramics (0.1≤x≤0.3) were investigated in comparison with pure PZT and SBT ceramics. It was found that the dielectric constant increased with small addition of SBT (x = 0.1) into PZT. The hysteresis loop measurement demonstrated that the PZT-SBT ceramics showed larger remanent polarization than pure PZT and less coercive filed than pure SBT ceramic. Strain behavior showed a symmetric butterfly curve in the compositions with 0≤x≤0.3 but the low strain obtained was found in pure SBT. This research suggested that 0.9PZT-0.1SBT ceramic is a promising material to be further utilized in ferroelectric memory devices.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleDielectric, Polarization and Strain Response of Enhanced Complex Ceramics: The Study through Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf>-SrBi<inf>2</inf>Ta<inf>2</inf>O<inf>9</inf>en_US
dc.typeJournalen_US
article.title.sourcetitleFerroelectricsen_US
article.volume488en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsUniversity of New South Wales (UNSW) Australiaen_US
article.stream.affiliationsSuranaree University of Technologyen_US
Appears in Collections:CMUL: Journal Articles

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