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Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/54495
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dc.contributor.authorKyung Sik Shinen_US
dc.contributor.authorBibhuti Bhusan Sahuen_US
dc.contributor.authorJeon Geon Hanen_US
dc.contributor.authorMasaru Horien_US
dc.date.accessioned2018-09-04T10:14:49Z-
dc.date.available2018-09-04T10:14:49Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn13474065en_US
dc.identifier.issn00214922en_US
dc.identifier.other2-s2.0-84930447268en_US
dc.identifier.other10.7567/JJAP.54.060303en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84930447268&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/54495-
dc.description.abstract© 2015 The Japan Society of Applied Physics. Careful analysis and investigations of the formation mechanism of the microstructure of the hydrogenated nanocrystalline silicon (nc-Si:H) film is presented. A systematic approach is made to understand the transition from amorphous (a-Si:H) to crystalline (nc-Si:H) by incorporating hydrogen dilution using inductively coupled plasma (ICP) assisted magnetron sputtering. Film analysis and plasma diagnostics results reveal that one can design desired microstructure simply by controlling H2dilution and energy control in the plasmas.en_US
dc.subjectEngineeringen_US
dc.subjectPhysics and Astronomyen_US
dc.titleEffectiveness of hydrogen dilution for designing amorphous to crystalline Si thin film in inductively coupled plasma assisted magnetron sputteringen_US
dc.typeJournalen_US
article.title.sourcetitleJapanese Journal of Applied Physicsen_US
article.volume54en_US
article.stream.affiliationsSungkyunkwan Universityen_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsNagoya Universityen_US
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