Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/53483
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dc.contributor.authorS. Srinoien_US
dc.contributor.authorY. Laosiritawornen_US
dc.date.accessioned2018-09-04T09:50:11Z-
dc.date.available2018-09-04T09:50:11Z-
dc.date.issued2014-09-02en_US
dc.identifier.issn16078489en_US
dc.identifier.issn10584587en_US
dc.identifier.other2-s2.0-84903130528en_US
dc.identifier.other10.1080/10584587.2014.905411en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84903130528&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/53483-
dc.description.abstractIn this work, the hysteresis loops of ferroelectric film with defects were investigated with Monte Carlo simulation and the modified Heisenberg model (discrete vector model) with DIFFOUR type interaction. The effect of localized vacancy defects on the electrical properties of ferroelectric film was studied. The defected ferroelectric film was simulated on the two-dimensional lattice with periodic boundary conditions. From results, at a given electric field, the hysteresis loop area was found to depend on the defect concentration of system. The higher defect concentration, the smaller hysteresis loop was obtained, which resulted from weaker ferroelectric interaction. © 2014 Taylor & Francis Group, LLC.en_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleMonte carlo investigation of defect-driven ferroelectric phase-transition in two dimensional defected filmen_US
dc.typeJournalen_US
article.title.sourcetitleIntegrated Ferroelectricsen_US
article.volume156en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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