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dc.contributor.authorN. Sirikulraten_US
dc.date.accessioned2018-09-04T06:08:20Z-
dc.date.available2018-09-04T06:08:20Z-
dc.date.issued2012-02-29en_US
dc.identifier.issn00406090en_US
dc.identifier.other2-s2.0-84857357314en_US
dc.identifier.other10.1016/j.tsf.2011.12.063en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84857357314&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/51766-
dc.description.abstractThe current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J=∑mCmVmwhere Cmis the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. © 2011 Elsevier B.V. All rights reserved.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titlePower series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba 0.8Sr 0.2)TiO 3 heterojunction diodeen_US
dc.typeJournalen_US
article.title.sourcetitleThin Solid Filmsen_US
article.volume520en_US
article.stream.affiliationsChiang Mai Universityen_US
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