ผลของสารตั้งต้นดีบุกและอุณหภูมิอบอ่อนลักษณะเฉพาะของฟิล์มดีบุกออกไซด์สำหรับการประยุกต์ใช้ใน เซลล์แสงอาทิตย์ชนิดเพอรอฟสไกต์

Abstract

Due to its exceptional semiconducting features, such as good band alignment and high electron mobility, SnO2 is one of the most extensively utilized materials as electron transporting layers (ETL) in perovskite solar cells (PSCs). However, the aging effect of SnCl2∙H2O in ethanol, a common precursor used to deposit SnO2 film, negatively impacts performance and manufacturing on an industrial scale. First-used deposition SnO2 film from tin(II) 2-ethylhexanoate precursor (C16H30O4Sn) was achieved as ETL in PSCs. The results exhibit that film has reproducibility and high-quality, by using an annealing temperature of 180 oC owing to greatest crystallinity and better charge transfer at the interface of ETL/perovskite layer. Moreover, the performance of PSCs with SnO2 film deposited from C16H30O4Sn precursor reveals better performance compared to PSCs with SnO2 film deposited from SnCl2 precursor.ln addition, the effect of aging precursors is monitored for different periods of time before deposit (0-30 days). It was found that PSCs using SnO2 film deposited from C16H30O4Sn precursor has a negligible aging effect and exhibit superior performance than PSCs using SnO2 film deposited from SnCl2 precursor. The chemistry of the colloidal particles in precursor-based solutions may be affected to quality of films. Finally, C16H30O4Sn could serve as a substitute precursor for preparing SnO2 film, which has useful applications in solar cells and other optoelectronic devices.