Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/75485
Title: Exceptional electron conduction in two-dimensional covalent organic frameworks
Authors: Enquan Jin
Keyu Geng
Shuai Fu
Sheng Yang
Narissa Kanlayakan
Matthew A. Addicoat
Nawee Kungwan
Johannes Geurs
Hong Xu
Mischa Bonn
Hai I. Wang
Jurgen Smet
Tim Kowalczyk
Donglin Jiang
Authors: Enquan Jin
Keyu Geng
Shuai Fu
Sheng Yang
Narissa Kanlayakan
Matthew A. Addicoat
Nawee Kungwan
Johannes Geurs
Hong Xu
Mischa Bonn
Hai I. Wang
Jurgen Smet
Tim Kowalczyk
Donglin Jiang
Keywords: Biochemistry, Genetics and Molecular Biology;Chemical Engineering;Chemistry;Environmental Science;Materials Science;Medicine
Issue Date: 9-Dec-2021
Abstract: Most organic/polymeric semiconductors are p-type semiconductors, whereas their n-type versions are limited in both availability and carrier mobility. How to develop high-rate n-type organic/polymeric semiconductors remains challenging. Here, we report an approach to high-rate n-type semiconductors via topology-directed polycondensation of conventional p-type knots with n-type isoindigo linkers to form non-conjugated tetragonal and hexagonal two-dimensional polymeric frameworks. The polymers are planar in conformation and show flattened frontier levels, which enable electrons to move along the non-conjugated polymeric backbones. The eclipsed face-to-face stack reduces reorganization energy and greatly strengthens electronic coupling, thus enabling band-like electron conduction perpendicular to polymer layers. A device recording electron mobility as high as 8.2 cm2 V−1 s−1 was achieved with Hall effect measurements, whereas time- and frequency-resolved terahertz spectroscopy revealed a benchmark mobility of 13.3 cm2 V−1 s−1. These new mechanistic insights with exceptional mobility open the way to high-rate n-type organic/polymeric semiconductors.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85120790668&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/75485
ISSN: 24519294
24519308
Appears in Collections:CMUL: Journal Articles

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