Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/7366
Title: Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
Authors: Unai S.
Puttaraksa N.
Pussadee N.
Singkarat K.
Rhodes M.W.
Whitlow H.J.
Singkarat S.
Issue Date: 2013
Abstract: For soft lithography, the conventional negative tone resists, such as SU-8, that are used to create the mold have a number of drawbacks. PMMA, which is normally used as a positive tone resist, can be used as a negative resist by using high-fluence irradiation conditions. In this report, we outline optimization of the irradiation conditions for PMMA thin films using 2 MeV H + ions to exploit their ability to work as a negative tone resist at ion fluences above 1.0 × 10 15 ions cm -2. The main aim was to induce cross-linking while maintaining the exposed regions free of blisters and maintaining short irradiation times. We found that by using a two-step process with a low-flux irradiation, followed by a high-flux irradiation, the exposure time could be shortened by ∼50%. We also found that ion fluences greater than 5.0 × 10 15 ions cm -2 minimized the distortion in stitched regions. © 2011 Elsevier B.V. All rights reserved.
URI: http://www.scopus.com/inward/record.url?eid=2-s2.0-84869083589&partnerID=40&md5=78a304c96fa9315dbdd5870d7b09fd83
http://cmuir.cmu.ac.th/handle/6653943832/7366
ISSN: 01679317
Appears in Collections:STRI: Journal Articles

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