Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/7360
Title: High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide
Authors: Khamsuwan J.
Intarasiri S.
Kirkby K.
Jeynes C.
Chu P.K.
Kamwanna T.
Yu L.D.
Issue Date: 2011
Abstract: Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence carbon ion implantation in silicon wafers at elevated temperatures, followed by high-energy heavy ion beam annealing. This work focuses on studying effects from the ion beam annealing on crystallization of SiC from implanted carbon and matrix silicon. In the ion beam annealing experiments, heavy ion beams of iodine and xenon, the neighbors in the periodic table, with different energies to different fluences, I ions at 10, 20, and 30MeV with 1-5×1012ions/cm2, while Xe ions at 4MeV with 5×1013 and 1×1014ions/cm2, bombarded C-ion in implanted Si at elevated temperatures. X-ray diffraction, Raman scattering, infrared spectroscopy were used to characterize the formation of SiC. Non-Rutherford backscattering and Rutherford backscattering spectrometry were used to analyze changes in the carbon depth profiles. The results from this study were compared with those previously reported in similar studies. The comparison showed that ion beam annealing could indeed induce crystallization of SiC, mainly depending on the single ion energy but not on the deposited areal density of the ion beam energy (the product of the ion energy and the fluence). The results demonstrate from an aspect that the electronic stopping plays the key role in the annealing. © 2011 Elsevier B.V.
URI: http://www.scopus.com/inward/record.url?eid=2-s2.0-80055101622&partnerID=40&md5=8b1167cc424b40170e73ac6342816520
http://cmuir.cmu.ac.th/handle/6653943832/7360
ISSN: 2578972
Appears in Collections:STRI: Journal Articles

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