Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/71915
Title: Influence of an SCN<sup>-</sup> moiety on the electronic properties of γ-CsPb(SCN)<inf>x</inf>Br<inf>3-x</inf> and the performance of carbon-based HTL-free γ-CsPb(SCN)<inf>x</inf>Br<inf>3-x</inf> perovskite solar cells
Authors: Pitphichaya Suksaengrat
Narit Faibut
Apiwat Chompoosor
Viyada Harnchana
Wirat Jarernboon
Pisist Kumnorkaew
Pornjuk Srepusharawoot
Samuk Pimanpang
Vittaya Amornkitbamrung
Authors: Pitphichaya Suksaengrat
Narit Faibut
Apiwat Chompoosor
Viyada Harnchana
Wirat Jarernboon
Pisist Kumnorkaew
Pornjuk Srepusharawoot
Samuk Pimanpang
Vittaya Amornkitbamrung
Keywords: Engineering;Materials Science;Physics and Astronomy
Issue Date: 1-Jan-2021
Abstract: © 2021, Springer Science+Business Media, LLC, part of Springer Nature. A CsPbBr3 film was prepared by the hot-casting method from a mixed CsBr and PbBr2 solution with an orthorhombic-phase (γ) CsPbBr3 perovskite structure. γ-CsPbBr3 film has a yellow color with a bandgap energy of 2.32 eV. The low SCN- dopant level forming CsPb(SCN)xBr3-x (x = 0.0625, 0.125, 0.01875, 0.25 and 0.5) films maintains an orthorhombic CsPb(SCN)xBr3-x structure with a film bandgap of 2.32-2.34 eV. The calculated bandgap of the optimized γ-CsPb(SCN)xBr3-x structures slightly changed with SCN- dopant levels from x = 0 to x = 0.5. A carbon-based hole transport layer (HTL)-free γ-CsPb(SCN)0.25Br2.75 solar cell delivers the highest efficiency of 4.5% under six conditions compared to a carbon-based HTL-free pure γ-CsPbBr3 solar cell with an efficiency of 3.89%. The stability of the carbon-based HTL-free γ-CsPb(SCN)0.25Br2.75 solar cell is better than that of the carbon-based HTL-free pure γ-CsPbBr3 solar cell with efficiency retention of 88.96% and 61.86% of their initial values, respectively, after a 30-day testing period.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85098504260&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/71915
ISSN: 1573482X
09574522
Appears in Collections:CMUL: Journal Articles

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