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dc.contributor.authorChaiyawat Kaewmeechaien_US
dc.contributor.authorYongyut Laosiritawornen_US
dc.contributor.authorAtchara Punya Jaroenjittichaien_US
dc.date.accessioned2020-04-02T15:18:01Z-
dc.date.available2020-04-02T15:18:01Z-
dc.date.issued2019-12-16en_US
dc.identifier.issn17426596en_US
dc.identifier.issn17426588en_US
dc.identifier.other2-s2.0-85077811704en_US
dc.identifier.other10.1088/1742-6596/1380/1/012112en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077811704&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/68051-
dc.description.abstract© Published under licence by IOP Publishing Ltd. We introduce the new perovskite material, CsMgBr3, which is composed of pure nontoxic-inorganic elements by substitution of Cs+ and Mg2+ instead of CH3NH3+ and Pb2+ in a well-known CH3NH3PbI3 perovskite. This study was extracted by using the density functional theory (DFT) with Hybrid functional of Heyd-Scuseria-Ernzerhof (HSE) and the generalized gradient approximation (GGA). The band structures of three diferent phases of CsMgBr3 including , β and γ-phases reveal that the band gaps of these material are in the ultraviolet region (UV). We found that only γ-phase is the direct band gap material, while others are the indirect band gap materials. The results of efective masses of these compounds show that the mobility of hole is lower than that of electron and the -phase has the highest hole and electron mobility.en_US
dc.subjectPhysics and Astronomyen_US
dc.titleElectronic structure of nontoxic-inorganic perovskite: CsMgBr<inf>3</inf> using DFT calculationen_US
dc.typeConference Proceedingen_US
article.title.sourcetitleJournal of Physics: Conference Seriesen_US
article.volume1380en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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