Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/61741
Title: Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering
Authors: T. Tohsophon
J. Hüpkes
S. Calnan
W. Reetz
B. Rech
W. Beyer
N. Sirikulrat
Keywords: Materials Science
Physics and Astronomy
Issue Date: 26-Jul-2006
Abstract: The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 °C were required. Possible mechanisms explaining the experimental results are discussed. © 2005 Elsevier B.V. All rights reserved.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33646538800&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/61741
ISSN: 00406090
Appears in Collections:CMUL: Journal Articles

Files in This Item:
There are no files associated with this item.


Items in CMUIR are protected by copyright, with all rights reserved, unless otherwise indicated.