Synthesis of silicon carbide nanowires doped with Al2O 3

Abstract

Synthesis of silicon carbide nanowires (SiC NWs) from an alumina doped silica-graphite rod is reported. The rod was gradually heated up to a growth temperature by passing current through it under constant flowing argon at atmospheric pressure. The as-grown layers, deposited on the rod surface were separated from the inner core and characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. A non-uniform layer thickness of alumina coating on SiC NWs was clearly observed when the doping was increased from 1 to 2 and 3 wt.%.