Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode

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DC Field	Value	Language
dc.contributor.author	N. Sirikulrat	en_US
dc.date.accessioned	2018-09-10T03:48:47Z	-
dc.date.available	2018-09-10T03:48:47Z	-
dc.date.issued	2008-02-22	en_US
dc.identifier.issn	00036951	en_US
dc.identifier.other	2-s2.0-39349109263	en_US
dc.identifier.other	10.1063/1.2883936	en_US
dc.identifier.uri	https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=39349109263&origin=inward	en_US
dc.identifier.uri	http://cmuir.cmu.ac.th/jspui/handle/6653943832/60742	-
dc.description.abstract	The Schottky barrier diode of the platinum thin film on the antimony doped barium strontium titanate polycrystalline ceramics was prepared and its electrical conduction was investigated. At the low field forward biasing, the current voltage relationship was Ohmic as expected from the space charge limited conduction (SCLC). Results from the high field biasing indicated that the exponential conduction occurred due to the Schottky emission rather than the trap free square law arising from the SCLC. The barrier height and the ideality factor of 0.87 eV and 1.5 were obtained in the diode with the Pt film thickness of 84 nm. © 2008 American Institute of Physics.	en_US
dc.subject	Physics and Astronomy	en_US
dc.title	Platinum thin film-antimony doped barium strontium titanate Schottky barrier diode	en_US
dc.type	Journal	en_US
article.title.sourcetitle	Applied Physics Letters	en_US
article.volume	92	en_US
article.stream.affiliations	Chiang Mai University	en_US
Appears in Collections:	CMUL: Journal Articles

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