Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/60737
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dc.contributor.authorThirumalesh Bannuruen_US
dc.contributor.authorWalter L. Brownen_US
dc.contributor.authorSuparut Narksitipanen_US
dc.contributor.authorRichard P. Vincien_US
dc.date.accessioned2018-09-10T03:48:27Z-
dc.date.available2018-09-10T03:48:27Z-
dc.date.issued2008-05-09en_US
dc.identifier.issn00218979en_US
dc.identifier.other2-s2.0-43049134835en_US
dc.identifier.other10.1063/1.2902954en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43049134835&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/60737-
dc.description.abstractTo explore alternatives to the use of pure Au in Ohmic contact RF microelectromechanical switches, we have measured changes in the electrical resistivity and nanoindentation hardness of a series of sputter deposited Au-V and Au- V2 O5 thin films. Increasing V content in the Au-V alloys increases resistivity and hardness, which is consistent with solid solution strengthening. In the Au- V2 O5 films, the increase in resistivity is greatly reduced and the hardness is further increased as expected for dispersion strengthening with V2 O5 particles. These two phenomena are explained in terms of solute and particle effects on electron scattering and bowing of dislocations, respectively. © 2008 American Institute of Physics.en_US
dc.subjectPhysics and Astronomyen_US
dc.titleThe electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switchesen_US
dc.typeJournalen_US
article.title.sourcetitleJournal of Applied Physicsen_US
article.volume103en_US
article.stream.affiliationsLehigh Universityen_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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