Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/60510
Title: Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
Authors: M. H. Wang
Y. Onai
Y. Hoshi
H. Lei
T. Kondo
T. Uchida
S. Singkarat
T. Kamwanna
S. Dangtip
S. Aukkaravittayapun
T. Nishide
S. Tokiwa
Y. Sawada
Keywords: Materials Science
Physics and Astronomy
Issue Date: 1-Jul-2008
Abstract: Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10- 5 Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crystallization process was monitored by high-temperature X-ray diffraction (XRD) analysis. We found a simple dependence between the crystallization temperature and the water vapor partial pressure. After the high-temperature XRD, the films deposited at low water vapor pressures (2 × 10- 5 Torr or lower) exhibited <100> preferred orientation, whereas those deposited at high water vapor pressures (3 × 10- 5 Torr or higher) exhibited <111> preferred orientation. Introduction of water vapor during the deposition decreased carrier concentration and increased mobility. The carrier concentration after thermal crystallization was dependent on the water vapor partial pressure. © 2007 Elsevier B.V. All rights reserved.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44349178249&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60510
ISSN: 00406090
Appears in Collections:CMUL: Journal Articles

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