Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/60412
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dc.contributor.authorN. Vittayakornen_US
dc.contributor.authorN. Chaiyoen_US
dc.contributor.authorR. Muanghluaen_US
dc.contributor.authorA. Ruangphaniten_US
dc.contributor.authorW. C. Vittayakornen_US
dc.date.accessioned2018-09-10T03:42:04Z-
dc.date.available2018-09-10T03:42:04Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn10226680en_US
dc.identifier.other2-s2.0-62949152426en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=62949152426&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/60412-
dc.description.abstractThe solid solution between the normal ferroelectric Pb(Zr 1/2Ti1/2)O3 (PZT) and relaxor ferroelectric Pb(Co1/3Nb2/3)O3 (PCoN) was synthesized by the solid state reaction method. Sintered PZT-PCoN ceramics were annealed at temperatures ranging from 850 to 1, 100°C for 4 h. X-ray diffraction patterns revealed changes of crystalline structure after annealing, which could be correlated to the accompanied changes in dielectric properties. Furthermore, significant improvements in the dielectric responses were observed in this system. After annealing, a huge increase of up to 200% occurred in the dielectric constants, especially near the temperature of maximum dielectric constant. © 2008 Trans Tech Publications, Switzerland.en_US
dc.subjectEngineeringen_US
dc.titleEffect of annealing on the structure and dielectric properties in PZT-PCoN ceramicsen_US
dc.typeBook Seriesen_US
article.title.sourcetitleAdvanced Materials Researchen_US
article.volume55-57en_US
article.stream.affiliationsKing Mongkut's Institute of Technology Ladkrabangen_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsThailand Ministry of Science and Technologyen_US
Appears in Collections:CMUL: Journal Articles

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