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dc.contributor.authorA. Ngamjarurojanaen_US
dc.contributor.authorS. Anantaen_US
dc.contributor.authorR. Yimnirunen_US
dc.date.accessioned2018-09-10T03:41:19Z-
dc.date.available2018-09-10T03:41:19Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn10226680en_US
dc.identifier.other2-s2.0-62949202705en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=62949202705&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/60342-
dc.description.abstractThe structure and electrical properties of Al2O 3-doped 0.2Pb(Zn1/3Nb2/3)O3-0. 8Pb(Zr1/2Ti1/2)O3 ceramic, which is the morphotropic phase boundary composition of the PZN-PZT system, were investigated. The addition of Al2O3 content transformed the crystal structure from coexisting with rhombohedral to purely tetragonal structure. Furthermore, addition of Al2O3 decreased εr, d33 and kp, but increased Curie temperature and enhanced the mechanical quality factor. Finally, the P-E and s-E loops demonstrated decreased Pr, Ec and strain level with addition of Al2O3. © 2008 Trans Tech Publications, Switzerland.en_US
dc.subjectEngineeringen_US
dc.titleEffect of Al<inf>2</inf>O<inf>3</inf> addition on dielectric, piezoelectric and ferroelectric properties of O.2Pb(Zn<inf>1/3</inf>Nb<inf>2/3</inf>)O <inf>3</inf>-0.8Pb(Zr<inf>1/2</inf>Ti<inf>1/2</inf>)O<inf>3</inf> ceramicsen_US
dc.typeBook Seriesen_US
article.title.sourcetitleAdvanced Materials Researchen_US
article.volume55-57en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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