Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/59940
Title: Electrical properties and phase transition behaviors of Sn doped 0.45PZT- 0.55PNN ceramics
Authors: K. Sutjarittangtham
N. Tawichai
U. Intatha
S. Eitssayeam
K. Pengpat
G. Rujijanagul
T. Tunkasiri
Keywords: Physics and Astronomy
Issue Date: 25-Nov-2009
Abstract: Dielectric properties, and phase transition behaviors of Sn doped 0.45PbZr1/2Ti1/2O3- 0.55PbNi1/3Nb2/3O3ceramics has been investigated. The ceramics were prepared by a normal solid-state method and were characterized, using a variety of techniques. For undoped samples, high relative permittivity of > 21000 (at 1k Hz) was found at the transition temperature of 104°C. With increasing Sn concentration, the degree of diffuse phase transition was enhanced and a linear reduction in the transition temperature was produced. © 2009 American Institute of Physics.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450091387&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/59940
ISSN: 15517616
0094243X
Appears in Collections:CMUL: Journal Articles

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