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DC Field | Value | Language |
---|---|---|
dc.contributor.author | P. Butnoi | en_US |
dc.contributor.author | S. Manotham | en_US |
dc.contributor.author | P. Jaita | en_US |
dc.contributor.author | D. Sweatman | en_US |
dc.contributor.author | N. Pisitpipathsin | en_US |
dc.contributor.author | T. Tunkasiri | en_US |
dc.date.accessioned | 2018-09-05T04:28:38Z | - |
dc.date.available | 2018-09-05T04:28:38Z | - |
dc.date.issued | 2018-02-12 | en_US |
dc.identifier.issn | 16078489 | en_US |
dc.identifier.issn | 10584587 | en_US |
dc.identifier.other | 2-s2.0-85044987304 | en_US |
dc.identifier.other | 10.1080/10584587.2018.1444894 | en_US |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85044987304&origin=inward | en_US |
dc.identifier.uri | http://cmuir.cmu.ac.th/jspui/handle/6653943832/58687 | - |
dc.description.abstract | © 2018 Taylor & Francis Group, LLC. In this work, electric field-induced strain behavior and ferroelectric properties of xBCZT/PZT (with x = 0, 4 and 8 mol%) ceramics have been investigated. The Ecand Princreased with increasing electric field and exhibited pinched-shape hysteresis loop at 60 kV/cm. The abnormal domain walls and switching behavior of the domains were used to discuss the above results. The strain value increased with increasing BCZT content and reached the maximum value of 0.27% (d*33= 450 pm/V) for the 4 mol% BCZT sample. This offered an opportunity to obtain a good candidate for using in piezoelectric applications. | en_US |
dc.subject | Engineering | en_US |
dc.subject | Materials Science | en_US |
dc.subject | Physics and Astronomy | en_US |
dc.title | Electric field–induced strain behavior and ferroelectric properties of lead zirconate titanate-barium calcium zirconate titanate ceramics | en_US |
dc.type | Journal | en_US |
article.title.sourcetitle | Integrated Ferroelectrics | en_US |
article.volume | 187 | en_US |
article.stream.affiliations | Chiang Mai University | en_US |
article.stream.affiliations | Rajamangala University of Technology Isan | en_US |
Appears in Collections: | CMUL: Journal Articles |
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