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dc.contributor.authorR. Panyathipen_US
dc.contributor.authorS. Choopunen_US
dc.contributor.authorP. Singjaien_US
dc.contributor.authorS. Sakulsermsuken_US
dc.date.accessioned2018-09-05T03:52:32Z-
dc.date.available2018-09-05T03:52:32Z-
dc.date.issued2017-10-20en_US
dc.identifier.issn17426596en_US
dc.identifier.issn17426588en_US
dc.identifier.other2-s2.0-85034072095en_US
dc.identifier.other10.1088/1742-6596/901/1/012076en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85034072095&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/57880-
dc.description.abstract© Published under licence by IOP Publishing Ltd. We report the response of graphene and N-doped graphene to ethanol vapor as gas sensors with varying the concentration of ethanol and temperature of graphene. Graphene was synthesized by chemical vapor deposition on copper foils and then was transferred to a glass slide by chemical etching. N-doped graphene was produced by annealing graphene in ammonia atmosphere. Results showed the response of both graphene and N-doped graphene are at low level up to 2.4%. The response of graphene increases with temperature up to 1.15%, but that of N-doped graphene decreases down to 0.30%. We proposed that the absorbed oxygen and nitrogen detachment are the key factors for the temperature dependence of the response of graphene and N-doped graphene, respectively.en_US
dc.subjectPhysics and Astronomyen_US
dc.titleTemperature dependence of graphene and N-doped graphene for gas sensor applicationsen_US
dc.typeConference Proceedingen_US
article.title.sourcetitleJournal of Physics: Conference Seriesen_US
article.volume901en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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