Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
Title: Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
Authors: Witawat Ponhan
Meechai Thepnurat
Surachet Phadungdhitidhada
Duangmanee Wongratanaphisan
Supab Choopun
Keywords: Chemistry
Materials Science
Physics and Astronomy
Issue Date: 25-Nov-2016
Abstract: © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm2/Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
ISSN: 02578972
Appears in Collections:CMUL: Journal Articles

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