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dc.contributor.authorS. Pramchuen_US
dc.contributor.authorA. P. Jaroenjittichaien_US
dc.contributor.authorY. Laosiritawornen_US
dc.date.accessioned2018-09-05T02:55:24Z-
dc.date.available2018-09-05T02:55:24Z-
dc.date.issued2016-11-25en_US
dc.identifier.issn02578972en_US
dc.identifier.other2-s2.0-84979692026en_US
dc.identifier.other10.1016/j.surfcoat.2016.06.060en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84979692026&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/55403-
dc.description.abstract© 2016 Elsevier B.V. We employed the density functional theory (DFT) based on plane wave pseudopotential method to investigate the structural and optical properties of Sn-incorporated orthorhombic CH3NH3PbI3, especially surface doping. The results from formation energies and chemical potential diagrams indicate that the condition defined between Pb-rich and I-rich is the most suitable condition to incorporate Sn into CH3NH3PbI3structure because formation energy of the impurity structure is lower than that of the undoped surface structure. Consequently, Sn doping can also stabilize surface structure. We found that the substitution of Sn for Pb atom on CH3NH3PbI3surface significantly reduces Egby 0.24 eV, compared with that of bulk doping. Therefore, the impurity of Sn on CH3NH3PbI3surface displays better improvement of optical properties and allows the perovskite to absorb light in a wider range (near-IR region) of wavelength in solar radiation.en_US
dc.subjectChemistryen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titleSurface Doping of Sn in Orthorhombic CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf>for Potential Perovskite Solar Cells: First Principles Studyen_US
dc.typeJournalen_US
article.title.sourcetitleSurface and Coatings Technologyen_US
article.volume306en_US
article.stream.affiliationsChiang Mai Universityen_US
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