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dc.contributor.authorOrawan Khammanen_US
dc.date.accessioned2018-09-04T09:53:56Z-
dc.date.available2018-09-04T09:53:56Z-
dc.date.issued2014-01-02en_US
dc.identifier.issn15635112en_US
dc.identifier.issn00150193en_US
dc.identifier.other2-s2.0-84892886151en_US
dc.identifier.other10.1080/00150193.2013.849981en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84892886151&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/53644-
dc.description.abstractGe doped (Bi0.5Na0.5)TiO3ceramics, (Bi0.5Na0.5)Ti1-xGexO3(BNTG, x = 0, 0.05, 0.10, 0.15 and 0.2), were prepared by using a solid-state method. The crystal structure of the ceramics was investigated by X-ray diffraction method. It was found that, under suitable conditions, all compositions can form single perovskite phase with rhombohedral symmetry. The grain size and morphology of the ceramics were examined by SEM. The average grain size of the ceramics was found to decrease with increasing Ge content. The dielectric constant was measured as a function of both temperature and frequency. All samples exhibited a relaxor ferroelectric behavior. © 2014 Copyright Taylor and Francis Group, LLC.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titlePhase formation and dielectric properties of Ge doped (Bi 0.5Na0.5)TiO3 ceramicsen_US
dc.typeJournalen_US
article.title.sourcetitleFerroelectricsen_US
article.volume458en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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