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dc.contributor.authorArjaree Thongonen_US
dc.contributor.authorSupab Choopunen_US
dc.contributor.authorRattikorn Yimnirunen_US
dc.contributor.authorYongyut Laosiritawornen_US
dc.date.accessioned2018-09-04T09:50:20Z-
dc.date.available2018-09-04T09:50:20Z-
dc.date.issued2014-07-24en_US
dc.identifier.issn16078489en_US
dc.identifier.issn10584587en_US
dc.identifier.other2-s2.0-84901420608en_US
dc.identifier.other10.1080/10584587.2014.905352en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84901420608&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/53492-
dc.description.abstractIn this study, we used the kinetic Monte Carlo simulation to investigate the growth dynamic of the films on a substrate by imitating the chemical vapour deposition process. As a prototype, the system was confined into three-dimensional slap where the deposit chamber was divided into array grids. The vapour flowed in and out with varying rates and concentrations and the growth process took place on the substrate placed at the bottom of the array. Interaction among atoms was considered to take Ising-like, and Kawasaki algorithm is used in this study to observe the average thickness and its variance. The result shows that for the increasing temperature, the average thickness decreases at fixed rates and concentration. With increasing the rates, at fixed concentration, the average thickness decrease at low temperature. Furthermore, the average thickness greatly increases at low temperature with increasing the concentration, at fixed rates. © 2014 Taylor & Francis Group, LLC.en_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.title3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigationen_US
dc.typeJournalen_US
article.title.sourcetitleIntegrated Ferroelectricsen_US
article.volume155en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsSuranaree University of Technologyen_US
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