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dc.contributor.authorThanatep Phatungthaneen_US
dc.contributor.authorGobwute Rujijanagulen_US
dc.date.accessioned2018-09-04T09:29:52Z-
dc.date.available2018-09-04T09:29:52Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn20936788en_US
dc.identifier.issn17388090en_US
dc.identifier.other2-s2.0-84880448009en_US
dc.identifier.other10.1007/s13391-013-0036-yen_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84880448009&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/52675-
dc.description.abstractIn this work, (1-x)SrFe1/2Nb1/2O3-xBaZn1/3Ta2/3O3 ((1-x)SFN-xBZT) ceramics with 0.02 ≤ x ≤ 0.11 were synthesized via a solid state reaction method. A phase formation analysis using the x-ray diffraction technique (XRD) showed that the ceramic samples exhibited a pure phase perovskite for x ≤ 0.10 compositions, indicating that the solubility limit of BZT in SFN is very low. Adding BZT enhanced the dielectric constant and reduced the dielectric loss. Very high dielectric constants (>40,000) were observed for the x = 0.10 samples. The dielectric property investigation also revealed that all samples exhibited dielectric relaxor behavior. © 2013 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.en_US
dc.subjectMaterials Scienceen_US
dc.titleDielectric properties of (1-x)SrFe1/2Nb1/2O3-xBaZn1/3Ta2/3O3 ceramicsen_US
dc.typeJournalen_US
article.title.sourcetitleElectronic Materials Lettersen_US
article.volume9en_US
article.stream.affiliationsChiang Mai Universityen_US
Appears in Collections:CMUL: Journal Articles

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