Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/52573
Title: Fast and blister-free irradiation conditions for cross-linking of PMMA induced by 2 MeV protons
Authors: Somrit Unai
Nitipon Puttaraksa
Nirut Pussadee
Kanda Singkarat
Michael W. Rhodes
Harry J. Whitlow
Somsorn Singkarat
Keywords: Engineering
Materials Science
Physics and Astronomy
Issue Date: 1-Feb-2013
Abstract: For soft lithography, the conventional negative tone resists, such as SU-8, that are used to create the mold have a number of drawbacks. PMMA, which is normally used as a positive tone resist, can be used as a negative resist by using high-fluence irradiation conditions. In this report, we outline optimization of the irradiation conditions for PMMA thin films using 2 MeV H+ions to exploit their ability to work as a negative tone resist at ion fluences above 1.0 × 1015ions cm-2. The main aim was to induce cross-linking while maintaining the exposed regions free of blisters and maintaining short irradiation times. We found that by using a two-step process with a low-flux irradiation, followed by a high-flux irradiation, the exposure time could be shortened by ∼50%. We also found that ion fluences greater than 5.0 × 1015ions cm-2minimized the distortion in stitched regions. © 2011 Elsevier B.V. All rights reserved.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869083589&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/52573
ISSN: 01679317
Appears in Collections:CMUL: Journal Articles

Files in This Item:
There are no files associated with this item.


Items in CMUIR are protected by copyright, with all rights reserved, unless otherwise indicated.