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dc.contributor.authorNarongchai Siwarakrangsunen_US
dc.contributor.authorNithi Atthien_US
dc.contributor.authorSupanit Porntheeraphaten_US
dc.contributor.authorJirawat Jantawongen_US
dc.contributor.authorKomgrit Leksakulen_US
dc.contributor.authorAmporn Poyaien_US
dc.date.accessioned2018-09-04T09:27:14Z-
dc.date.available2018-09-04T09:27:14Z-
dc.date.issued2013-02-25en_US
dc.identifier.issn10226680en_US
dc.identifier.other2-s2.0-84874043393en_US
dc.identifier.other10.4028/www.scientific.net/AMR.658.93en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874043393&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/52570-
dc.description.abstractThe 3-D microstructure can be formed by using Multi-film thickness mask (MFT-mask) with single exposure and single develop. The intensity of the UV light getting through the mask increases as the thickness of the chromium film decreases. However, the ultra-thin Cr film makes the deposition and etching process of Cr film difficult to control. By depositing the nickel film as a buffer layer on the Cr film, the Cr/Ni film stack can filter the UV light and increase the amount step of the light intensity. This can improve the performance of the MFT-mask to generate fine 3-D patterning step similar to gray-scale lithography with lower cost. © (2013) Trans Tech Publications, Switzerland.en_US
dc.subjectEngineeringen_US
dc.titleFabrication of multi-level photoresist patterns in one-step lithography by using Cr/Ni multi-film thickness masken_US
dc.typeBook Seriesen_US
article.title.sourcetitleAdvanced Materials Researchen_US
article.volume658en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsThailand National Electronics and Computer Technology Centeren_US
Appears in Collections:CMUL: Journal Articles

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