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dc.contributor.authorC. Chaiwongen_US
dc.contributor.authorP. Rachtanapunen_US
dc.contributor.authorS. Sarapiromen_US
dc.contributor.authorD. Boonyawanen_US
dc.description.abstractIn this work we present the influence of carrier gases in the deposition of low-pressure discharge plasma of hexamethyldisiloxane (HMDSO). Plasma polymerized HMDSO films were deposited with an inductively-coupled discharge reactor using Ar and O2as carrier gases. The films deposited in Ar contained polymeric structure in the form of SiOxCyHzand could significantly improve the barrier to water vapor of poly(lactic acid) (PLA). The SiOx-like structure of HMDSO films was obtained when using O2as the carrier gas. However, the films supported some state of residual stress leading to film failures and a significant loss of barrier performance of PLA. The formation of organic and inorganic contents in the films was confirmed by X-ray photoelectron spectroscopy (XPS). The discharge power had an effect on the topography of the films. Rough surface with coarse texture was obtained when the process was done in Ar at high discharge powers. On the other hand, the deposition process in O2induced smoother surface of plasma-polymerized films. © 2012 Elsevier B.V.en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysics and Astronomyen_US
dc.titlePlasma polymerization of hexamethyldisiloxane: Investigation of the effect of carrier gas related to the film propertiesen_US
article.title.sourcetitleSurface and Coatings Technologyen_US
article.volume229en_US Mai Universityen_US of Higher Educationen_US
Appears in Collections:CMUL: Journal Articles

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