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dc.contributor.authorN. Jaitanongen_US
dc.contributor.authorH. R. Zengen_US
dc.contributor.authorG. R. Lien_US
dc.contributor.authorQ. R. Yinen_US
dc.contributor.authorW. C. Vittayakornen_US
dc.contributor.authorR. Yimnirunen_US
dc.contributor.authorA. Chaipanichen_US
dc.date.accessioned2018-09-04T04:48:39Z-
dc.date.available2018-09-04T04:48:39Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn01694332en_US
dc.identifier.other2-s2.0-77349102698en_US
dc.identifier.other10.1016/j.apsusc.2009.12.013en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77349102698&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/50962-
dc.description.abstractCement-based piezoelectric composites have attracted great attention recently due to their promising applications as sensors in smart structures. Lead zirconate titanate (PZT) and Portland cement (PC) composite were fabricated using 60% of PZT by volume. Scanning Electron Microscope and piezoresponse force microscope were used to investigate the morphology and domain configurations at the interfacial zone of PZT-Portland cement composites. Angular PZT ceramic grains were found to bind well with the cement matrix. The submicro-scale domains were clearly observed by piezoresponse force microscope at the interfacial regions between the piezoelectric PZT phase and Portland cement phase, and are clearer than the images obtained for pure PZT. This is thought to be due to the applied internal stress of cement to the PZT ceramic particle which resulted to clearer images. © 2009 Elsevier B.V. All rights reserved.en_US
dc.subjectMaterials Scienceen_US
dc.titleInterfacial morphology and domain configurations in 0-3 PZT-Portland cement compositesen_US
dc.typeJournalen_US
article.title.sourcetitleApplied Surface Scienceen_US
article.volume256en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsShanghai Institute of Ceramics Chinese Academy of Sciencesen_US
article.stream.affiliationsSuranaree University of Technologyen_US
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