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dc.contributor.authorTheerapong Santhaveesuken_US
dc.contributor.authorDuangmanee Wongratanaphisanen_US
dc.contributor.authorSupab Choopunen_US
dc.date.accessioned2018-09-04T04:46:17Z-
dc.date.available2018-09-04T04:46:17Z-
dc.date.issued2010-05-05en_US
dc.identifier.other2-s2.0-77951659181en_US
dc.identifier.other10.1109/INEC.2010.5424934en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77951659181&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/50828-
dc.description.abstractZn-TiO2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO2. The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and face-center cubic Zn2TiO4 phases, for 10-30 mol% of TiO2. The Zn2TiO4 phase was increased as the increasing of the mol% of TiO2 and became a major phase when TiO2 reached 30 mol%, in distinction with ZnO. The optical energy band gap of thick films was measured by the help of reflection spectra. The optical energy band gap were ranging from about 3.30-3.58 eV, as the mol% of TiO2 increased from 0-30. ©2010 IEEE.en_US
dc.subjectEngineeringen_US
dc.titleOptical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation methoden_US
dc.typeConference Proceedingen_US
article.title.sourcetitleINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedingsen_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsMinistry of Educationen_US
Appears in Collections:CMUL: Journal Articles

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