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dc.contributor.authorKanyaporn Adpakpangen_US
dc.contributor.authorThapanee Sarakonsrien_US
dc.contributor.authorSeiji Isodaen_US
dc.contributor.authorYasuhiro Shinodaen_US
dc.contributor.authorChanchana Thanachayanonten_US
dc.date.accessioned2018-09-04T04:46:04Z-
dc.date.available2018-09-04T04:46:04Z-
dc.date.issued2010-06-25en_US
dc.identifier.issn09258388en_US
dc.identifier.other2-s2.0-77954215888en_US
dc.identifier.other10.1016/j.jallcom.2010.04.023en_US
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77954215888&origin=inwarden_US
dc.identifier.urihttp://cmuir.cmu.ac.th/jspui/handle/6653943832/50810-
dc.description.abstractCdIn2Se4semiconductor is known as a high performance electrical material. In this study, CdIn2Se4powder was synthesized via an aqueous chemical reduction, or a solution method, at low temperature, using Se metal, InCl3, and CdCl2·2. 5H2Oas precursors,NaBH4 as a reducing agent, and water as a solvent. Preparative parameters have been considered; reaction temperature at 100 and 130 °C, reaction time at 30 min and 6 h. Finally, product powders were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The CdIn2Se4phase was observed to occur in some preparative conditions with In(OH)3 contaminating phase. However, In(OH)3impurity has disappeared when the reaction temperature was 130 °C with a reaction time of 30 min, confirmed by XRD patterns. Particle size of product powders was measured from TEM micrographs to be 9.17±0.94 nm. © 2009 Elsevier B.V.en_US
dc.subjectEngineeringen_US
dc.subjectMaterials Scienceen_US
dc.titleSynthesis of CdIn<inf>2</inf>Se<inf>4</inf>compound used as thermoelectric materials via the solution methoden_US
dc.typeJournalen_US
article.title.sourcetitleJournal of Alloys and Compoundsen_US
article.volume500en_US
article.stream.affiliationsChiang Mai Universityen_US
article.stream.affiliationsKyoto Universityen_US
article.stream.affiliationsThailand National Metal and Materials Technology Centeren_US
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