Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/50053
Title: The roles of thin dense metal oxide films in inverted hybrid solar cells
Authors: O. Wiranwetchayan
Z. Liang
Q. Zhang
G. Z. Cao
P. Singjai
Keywords: Materials Science
Issue Date: 1-Dec-2011
Abstract: The wideband semiconducting metal oxide TiO 2 and Nb 2O 5 thin films have been deposited onto FTO substrates by sol-gel method for the fabrication of inverted hybrid photovoltaics. A thin metal oxide film of approximately 10 nm in thickness between the electron collecting electrode and the photoactive blend of poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) has been demonstrated to be necessary to promote the formation of continuous uniform PCBM film to block holes from being recombined with good power conversion efficiency of 2.8% and much enhanced stability. In spite the fact that the conduction band of Nb 2O 5 is higher than the LUMO of PCBM, a power conversion of 2.7% was achieved, a very small difference in comparison with TiO 2 hybrid solar cells (2.8%). Increased thickness of dense metal oxide film leads to decreased fill factor, current density, and thus the power conversion efficiency. The above experimental results suggest that electrons from LOMO energy level of P3HT and PCBM can tunnel through dense metal oxide film to charge collecting FTO substrate. © 2011 IEEE.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84860467726&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/50053
Appears in Collections:CMUL: Journal Articles

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