Please use this identifier to cite or link to this item: http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961
Title: Direct writing of channels for microfluidics in silica by MeV ion beam lithography
Authors: Nitipon Puttaraksa
Mari Napari
Orapin Chienthavorn
Rattanaporn Norarat
Timo Sajavaara
Mikko Laitinen
Somsorn Singkarat
Harry J. Whitlow
Keywords: Engineering
Issue Date: 12-Jul-2011
Abstract: The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland.
URI: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960058706&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961
ISSN: 10226680
Appears in Collections:CMUL: Journal Articles

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