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dc.contributor.authorSaweat Intarasirien_US
dc.date.accessioned2014-09-19T04:46:23Z-
dc.date.available2014-09-19T04:46:23Z-
dc.date.issued2007en_US
dc.identifier.govdocTh 546.683 S271Ien_US
dc.identifier.urihttp://search.lib.cmu.ac.th/search/?searchtype=.&searcharg=b1420033en_US
dc.identifier.urihttp://cmuir.cmu.ac.th/handle/6653943832/34300-
dc.language.isoengen_US
dc.publisherChiang Mai : Graduate School, Chiang Mai University, 2007en_US
dc.subjectSiliconen_US
dc.subjectSilicon carbideen_US
dc.subjectSilicon carbide -- Testingen_US
dc.titleImplanted and activated carbon distribution profiles in silicon: ion beam synthesis of silicon carbide = รูปแบบการกระจายของสารเจือคาร์บอนที่ถูกฝังและถูกกระตุ้นในซิลิกอน: การสังเคราะห์ซิลิกอนคาร์ไบด์ด้วยวิธีไอออนบีม / Saweat Intarasirien_US
dc.typeThesisen_US
Appears in Collections:SCIENCE: Theses

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